| PART |
Description |
Maker |
| HN2E04F |
Multi-chip discrete device (PNP SW diode)
|
TOSHIBA
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| TPCF8B01 |
MOSFET TPC Series
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications
|
TOSHIBA
|
| 8P008SRV1303I15 8P001SRV1303C15 8P008SRV1303C25 8P |
4M X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
64K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
4M X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
64K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
128K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
256K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
384K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
128K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
256K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
384K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
|
White Electronic Designs, Corp.
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| WED2ZL361MSJ-BC WED2ZL361MSJ26BI WED2ZL361MSJ42BC |
NBL SSRAM MCP
1M X 36 MULTI DEVICE SRAM MODULE, 2.6 ns, PBGA119
1M X 36 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA119
|
WHITE ELECTRONIC DESIGNS CORP
|
| PUMA68SV32000BM-020 PUMA68SV32000BI-015 |
1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PQCC68 25.27 X 25.27 MM, 5.08 MM HEIGHT, PLASTIC, LCC-68
1M X 32 MULTI DEVICE SRAM MODULE, 15 ns, PQCC68
|
ST Microelectronics
|
| DPS96122-100I DPS96122-85I DPS96122-150I |
256K X 16 MULTI DEVICE SRAM MODULE, 100 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 85 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 150 ns, DMA68
|
|
| SYS32512ZK-010 SYS32512ZK-012 SYS32512ZK-015 SYS32 |
512 K x 32 Static RAM
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PSMA72 PLASTIC, SIMM-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PSMA72 PLASTIC, SIMM-72
512 K x 32 Static RAM 512亩32静态RAM
|
Amphenol, Corp.
MOSAIC
http://
Fujitsu, Ltd.
NXP Semiconductors N.V.
|
| CS201212-5R6K CS201212-4R7K CS201212-R15K CS201212 |
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 5600000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 4700000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 150000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 3300000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 820000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 680000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 180000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 68000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 33000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
|
